Method for forming metal wiring of semiconductor device

专利摘要:
The present invention provides a method for forming a metal wiring of a semiconductor device capable of improving the surface topology when forming a plug using a tungsten film and ensuring a sufficient process margin during stack contact. According to another aspect of the present invention, there is provided a method of forming a metal wiring of a semiconductor device, the method including: forming a first interlayer insulating film on a semiconductor substrate; Etching the first interlayer insulating layer to expose a portion of the substrate to form a first contact hole; Forming a barrier metal film on the first contact hole surface and the first interlayer insulating film; Forming a plug metal film on the barrier metal film; Forming a plug by etching the plug metal film over the entire surface of the plug metal film until the barrier metal film is exposed; Patterning a barrier metal film to form a barrier metal film pattern connected to one side of the plug and extending by a predetermined area; Forming a second interlayer insulating film over the substrate; Etching the second interlayer insulating layer to expose a portion of the barrier metal layer pattern and the plug to form a second contact hole; Forming a metal film on the second interlayer insulating film so as to be buried in the second contact hole; And forming a wiring by patterning the metal film.
公开号:KR20000042860A
申请号:KR1019980059152
申请日:1998-12-28
公开日:2000-07-15
发明作者:김도우
申请人:김영환；현대전자산업 주식회사；
IPC主号:

专利说明:

Metal wiring formation method of semiconductor device
The present invention relates to a method for forming metal wiring of a semiconductor device, and more particularly to a method for forming metal wiring of a semiconductor device using a plug.
As semiconductor devices become highly integrated, the size of contact holes is reduced and the depth of diffusion regions is also reduced, resulting in a problem of increasing contact resistance of wirings and breaking of junctions. In addition, since the reduction of the length in the lateral direction is mainly used for miniaturization of the device, the aspect ratio of the surface level increases. Therefore, the covering force of the metal wiring film formed by sputtering of the aluminum film is weakened, which causes the problem of wiring short circuit, thereby lowering the reliability of the device.
On the other hand, in order to reduce the resistance of the wiring to improve the operation speed of the device and to prevent the wiring failure due to the increase in the aspect ratio, a tungsten plug is formed by embedding a refractory metal film such as tungsten in the contact hole. Wiring was formed to connect the upper wiring and the lower wiring through the plug.
Meanwhile, before depositing a tungsten film in the contact hole, a barrier metal film such as a titanium film and a titanium nitride film is applied inside the contact hole. In addition, the barrier metal film is etched together when the tungsten film is etched back for plug formation. However, due to the difference in etching speed between the titanium film and the tungsten film, not only does it take longer to remove titanium during the etchback process but also the surface becomes uneven due to the overetching of the tungsten film in the center of the contact hole, thereby degrading the topology characteristics. There was a problem. In addition, in the formation of a stack structure using a plug, there is a disadvantage in that a process margin in stack contact contacting the plug is small.
Accordingly, the present invention is to solve the above-mentioned problems, a method for forming a metal wiring of a semiconductor device capable of improving the surface topography characteristics when forming a plug using a tungsten film and ensuring a sufficient process margin during stack contact. The purpose is to provide.
1A to 1E are cross-sectional views illustrating a method of forming metal wirings in a semiconductor device according to an embodiment of the present invention.
[Description of Code for Major Parts of Drawing]
10 semiconductor substrate 11 field oxide film
12: gate oxide film 13: gate
14 spacer 15, 19 first and second interlayer insulating film
16: barrier metal film 16A: barrier metal film pattern
17: tungsten film 17A: tungsten plug
18 photoresist film pattern 20 second contact hole
21: metal wiring
Method of forming a metal wiring of a semiconductor device according to the present invention for achieving the above object comprises the steps of forming a first interlayer insulating film on a semiconductor substrate; Etching the first interlayer insulating layer to expose a portion of the substrate to form a first contact hole; Forming a barrier metal film on the first contact hole surface and the first interlayer insulating film; Forming a plug metal film on the barrier metal film; Forming a plug by etching the metal film entirely until the barrier metal film is exposed; Patterning the barrier metal film to form a barrier metal film pattern connected to one side of the plug and extending by a predetermined area; Forming a second interlayer insulating film over the substrate; Etching the second interlayer insulating layer to expose a portion of the barrier metal layer pattern and the plug to form a second contact hole; Forming a metal film on the second interlayer insulating film so as to be buried in the second contact hole; And forming a wiring by patterning the metal film.
In addition, the forming of the barrier metal film pattern may include forming a negative photoresist film on the substrate on which the plug is formed; Moving the photoresist film by moving the stack contact hole reticle by a desired contact region, and then developing the photoresist film to form a photoresist film pattern; Etching the barrier metal film using a photoresist film pattern; And removing the photoresist film pattern.
Hereinafter, with reference to the accompanying drawings will be described an embodiment of the present invention.
1A to 1E are cross-sectional views illustrating a method of forming metal wirings in a semiconductor device according to an embodiment of the present invention.
Referring to FIG. 1A, an active region is defined by the field oxide film 11, a gate oxide film 12 is disposed in the active region, and a gate having a spacer 12 is formed on the sidewall, and a junction region (not shown) is formed. The semiconductor substrate 10 provided is provided. Then, the first interlayer insulating film 15 is formed on the entire surface of the substrate 10, and the first interlayer insulating film 15 is etched to expose a portion of the junction region to form a first contact hole. A barrier metal layer 16 is formed on the surface of the first contact hole and the interlayer insulating layer 15 to form a barrier metal layer 16 such as a titanium layer and a titanium nitride layer, and to be embedded in the first contact hole where the barrier metal layer 16 is formed. 16, a plug metal film, preferably a tungsten film 17, is formed.
Then, as shown in FIG. 1B, the tungsten film 17 is etched back until the barrier metal film 16 is exposed to form the tungsten plug 17A. Referring to FIG. 1C, a negative photoresist film is coated on the entire surface of the substrate, the reticle for stack contact holes is moved by a desired stack contact region Δx, and the photoresist film is exposed and developed to develop a photoresist film pattern 18. To form.
Referring to FIG. 1D, the barrier metal film pattern etched using the photoresist film pattern 18 as an etch mask to be connected to one side of the tungsten plug 17A and extended by the stack contact region Δx. (16A) is formed and the photoresist film pattern 18 is removed by a known method. Then, the second interlayer insulating film 19 is formed on the entire surface of the substrate, and the second contact hole 20 is formed by etching the tungsten plug 17A and a part of the barrier metal film pattern 16A to be exposed.
Referring to FIG. 1E, a metal film is deposited and patterned on the second interlayer insulating film 19 so as to be buried in the second contact hole 20 to form a metal wiring 21.
According to the present invention described above, since the tungsten film and the barrier metal film are etched, respectively, the surface topology of the tungsten film is improved. In addition, by patterning the barrier metal film so as to be connected to the tungsten plug in an extended form by the stack contact region, a sufficient contact margin can be secured during subsequent stack contact, so that wiring formation is facilitated.
In addition, this invention is not limited to the said Example, It can variously deform and implement within the range which does not deviate from the technical summary of this invention.

权利要求:
Claims (5)
[1" claim-type="Currently amended] Forming a first interlayer insulating film on the semiconductor substrate;
Etching the first interlayer insulating layer to expose a portion of the substrate to form a first contact hole;
Forming a barrier metal film on the surface of the first contact hole and the first interlayer insulating film;
Forming a plug metal film on the barrier metal film;
Forming a plug by etching the plug metal film over the entire surface of the plug metal film until the barrier metal film is exposed; And,
And patterning the barrier metal film to form a barrier metal film pattern extending in a predetermined area by being connected to one side of the plug.
[2" claim-type="Currently amended] The method of claim 1, wherein the forming of the barrier metal film pattern is performed.
Forming a negative photoresist film on the plug-formed substrate;
Moving the photoresist film by moving the stack contact hole reticle by a desired contact region, and then developing the photoresist layer to form a photoresist film pattern;
Etching the barrier metal layer using the photoresist layer pattern; And,
And removing the photoresist layer pattern.
[3" claim-type="Currently amended] The method of claim 1, further comprising: forming a second interlayer insulating film on an entire surface of the substrate on which the barrier metal film pattern is formed;
Etching the second interlayer insulating layer to expose a portion of the barrier metal layer pattern and the plug to form a second contact hole;
Forming a metal film on the second interlayer insulating film to be buried in the second contact hole; And,
And forming a wiring by patterning the metal film.
[4" claim-type="Currently amended] The method of claim 1, wherein the plug metal film is a tungsten film.
[5" claim-type="Currently amended] 5. The method of claim 1 or 4, wherein the front surface etching of the plug metal film proceeds to etch back.

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同族专利:

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引用文献:

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公开号 | 申请日 | 公开日 | 申请人 | 专利标题

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法律状态:
1998-12-28|Application filed by 김영환, 현대전자산업 주식회사

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1998-12-28|Priority to KR1019980059152A

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2000-07-15|Publication of KR20000042860A

优先权:

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申请号 | 申请日 | 专利标题

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KR1019980059152A|KR20000042860A|1998-12-28|1998-12-28|Method for forming metal wiring of semiconductor device|